Datasheet Details
| Part number | AOWF450A70 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 623.49 KB |
| Description | N-Channel Power Transistor |
| Download | AOWF450A70 Download (PDF) |
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| Part number | AOWF450A70 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 623.49 KB |
| Description | N-Channel Power Transistor |
| Download | AOWF450A70 Download (PDF) |
|
|
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• Proprietary aMOS5TM technology • Low RDS(ON) • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse recovery Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V Applications • PFC and PWM stages (Flyback, LLC) of Adapter, PC Silverbox,Server,Gaming Power Supply,Industrial, TV,Lighting 100% UIS Tested 100% Rg Tested TO-262F D Top View Bottom View 800V 44A < 0.45Ω 20nC 2.5mJ G DS Orderable Part Number AOWF450A70 G D S Package Type TO262F G S Form Tube Minimum Order Quantity 1000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Gate-Source Voltage (dynamic) AC( f>1Hz) TC=25°C Continuous Drain Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt VGS ID IDM IAR EAR EAS dv/dt Power Dissipation B TC=25°C Derate above 25°C PD Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TJ, TSTG TL Maximum 700 ±20 ±30 11* 7.1* 44 2.5 3.1 30 100 20 26 0.2 -55 to 150 300 Units V V V A A mJ mJ V/ns W W/°C °C °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Symbol RqJA Maximum Junction-to-Case RqJC * Drain current limited by maximum junction temperature.
Typical 55 3.9 Maximum 65 4.8 Units °C/W °C/W Rev.1.1: February 2024 www.aosmd.com Page 1 of 6 AOWF450A70 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0V, TJ=25°C ID=250μA, VGS=0V, TJ=150°C BVDSS /∆TJ Breakdown Voltage Temperature Coefficient ID=250μA, VGS=0V IDSS Zero Gate Voltage Drain Current VDS=700V, VGS=0V VDS=560V, TJ=125°C IGSS G
AOWF450A70 700V, a MOS5 TM N-Channel Power Transistor General.
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