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AO4614B Datasheet 40v Dual P + N-channel MOSFET

Manufacturer: Alpha - Omega Semiconductor

Overview: AO4614B 40V Dual P + N-Channel MOSFET General.

General Description

The AO4614B uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.

The plementary MOSFETs may be used in H-bridge, Inverters and other applications.

Product Summary N-Channel P-Channel VDS (V) = 40V, ID = 6A (VGS=10V), RDS(ON) < 30mW (VGS=10V) < 38mW (VGS=4.5V) -40V -5A (VGS=-10V) < 45mW (VGS= -10V) < 63mW (VGS= -4.5V) 100% UIS Tested 100% Rg Tested 100% UIS Tested 100% Rg Tested SOIC-8 D2 Top View Bottom View Top View Pin1 S2 1 G2 2 S1 3 G1 4 8 D2 7 D2 6 D1 G2 5 D1 G1 S2 n-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current A TA=70°C ID Pulsed Drain Current B IDM Avalanche Current B IAR Repetitive avalanche energy L=0.1mH B EAR Power Dissipation TA=25°C TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Max n-channel 40 ±20 6 5 30 14 9.8 2 1.28 -55 to 150 Max p-channel -40 ±20 -5 -4 -30 -20 20 2 1.28 -55 to 150 D1 S1 p-channel Units V V A mJ W °C Thermal Characteristics: n-channel and p-channel Parameter Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C Steady-State Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C Steady-State Symbol RqJA RqJL RqJA RqJL Device Typ n-ch 48 n-ch 74 n-ch 35 p-ch 48 p-ch 74 p-ch 35 Max Units 62.5 °C/W 110 °C/W 50 °C/W 62.5 °C/W 110 °C/W 50 °C/W Rev.3.1: August 2023 .aosmd.

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