Datasheet Details
| Part number | AO4312 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 571.78 KB |
| Description | N-Channel MOSFET |
| Datasheet | AO4312-AlphaOmegaSemiconductors.pdf |
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Overview: AO4312 36V N-Channel MOSFET General.
| Part number | AO4312 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 571.78 KB |
| Description | N-Channel MOSFET |
| Datasheet | AO4312-AlphaOmegaSemiconductors.pdf |
|
|
|
The AO4312 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.Power losses are minimized due to an extremely low bination of RDS(ON) and Crss.In addition,switching behavior is well controlled with a "Schottky style" soft recovery body diode.
Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 100% UIS Tested 100% Rg Tested 36V 23A < 4.5mΩ < 6.2mΩ Top View D D D D SOIC-8 Bottom View D G S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C TA=25°C Power Dissipation B TA=70°C VGS ID IDM IAS, IAR EAS, EAR PD Junction and Storage Temperature Range TJ, TSTG G Maximum 36 ±20 23 18 264 45 101 4.2 2.7 -55 to 150 S Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Typ 25 50 12 Max 30 60 15 Units V V A A mJ W °C Units °C/W °C/W °C/W Rev 0: December 2010 .aosmd.
Page 1 of 6 AO4312 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 36 V IDSS Zero Gate Voltage Drain Current VDS=36V, VGS=0V TJ=55°C 1 µA 5 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V 100 nA VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.3 1.8 2.3 V ID(ON) On state drain current VGS=10V, VDS=5V 264 A RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A TJ=125°C 3.4 4.5 mΩ 5.2 6.9 VGS=4.5V, ID=20A 4.5 6.2 mΩ gFS Forward Transconductance VDS=5V, ID=20A 110 S VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 1 V IS Maximum Body-Diode Continuous Current 5.5 A
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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AO4312 | N-Channel MOSFET | Kexin |
| Part Number | Description |
|---|---|
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