Datasheet4U Logo Datasheet4U.com

AO4312 - N-Channel MOSFET

Key Features

  • s.
  • VDS (V) = 36V.
  • ID = 23 A (VGS = 10V).
  • RDS(ON) ＜ 4.5mΩ (VGS = 10V).
  • RDS(ON) ＜ 6.2mΩ (VGS = 4.5V) D +0.04 0.21 -0.02 SOP-8 MOSFET 1.50 0.15 1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain G S.
  • Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current Pulsed Drain Current Avalanche Current Avalanche energy Power Dissipation Thermal Resistance. Junction- to-Ambient Thermal Resistance. Juncti.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
AO4312 N-Channel MOSFET Alpha & Omega Semiconductors
AO4310 N-Channel MOSFET Alpha & Omega Semiconductors
AO4314 36V N-Channel MOSFET Alpha & Omega Semiconductors
AO4302 N-Channel MOSFET Alpha & Omega Semiconductors
AO4304 N-Channel MOSFET Alpha & Omega Semiconductors

Other Datasheets by Kexin Semiconductor

Part Number Description
AO4310 N-Channel MOSFET
AO4314 N-Channel MOSFET
AO4302 N-Channel MOSFET
AO4304 N-Channel MOSFET
AO4306 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SMD Type N-Channel MOSFET AO4312 (KO4312) ■ Features ● VDS (V) = 36V ● ID = 23 A (VGS = 10V) ● RDS(ON) ＜ 4.5mΩ (VGS = 10V) ● RDS(ON) ＜ 6.2mΩ (VGS = 4.5V) D +0.04 0.21 -0.02 SOP-8 MOSFET 1.50 0.15 1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain G S ■ Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current Pulsed Drain Current Avalanche Current Avalanche energy Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Lead Junction Temperature Storage Temperature Range TA=25℃ TA=70℃ L=0.1mH TA=25℃ TA=70℃ t ≤ 10s Steady-State Symbol VDS VGS ID IDM IAS,IAR EAS,EAR PD RthJA RthJL TJ Tstg Rating 36 ±20 23 18 264 45 101 4.2 2.