AO4314 Overview
Description
The AO4314 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching losses are minimized due to an extremely low combination of RDS(ON) and addition,switching behavior is well controlled with a "Schottky style" soft recovery body diode. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 100% UIS Tested 100% Rg Tested 36V 20A < 6mΩ < 8.5mΩ SOIC-8 D Top View Bottom View D D D D G S S S G S Parameter Symbol Maximum Drain-Source Voltage VDS 36 Gate-Source Voltage VGS ±20 Continuous Drain Current TA=25°C TA=70°C ID 20 16 Pulsed Drain Current C IDM 219 Avalanche Current C IAS, IAR 35 Avalanche energy L=0.1mH C EAS, EAR 61 TA=25°C Power Dissipation B TA=70°C PD 4.2 2.7 Junction and Storage Temperature Range TJ, TSTG -55 to 150 Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RθJA 25 50 Maximum Junction-to-Lead Steady-State RθJL 12 Max 30 60 15 Units V V A A mJ W °C Units °C/W °C/W °C/W Rev 0: December 2010 Page 1 of 6 AO4314 Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 36 V IDSS Zero Gate Voltage Drain Current VDS=36V, VGS=0V TJ=55°C 1 µA 5 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V 100 nA VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.2 1.8 2.3 V ID(ON) On state drain current VGS=10V, VDS=5V 219 A RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A TJ=125°C 4.2 6 mΩ 6.5 9.5 VGS=4.5V, ID=20A 5.7 8.5 mΩ gFS Forward Transconductance VDS=5V, ID=20A 90 S VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 1 V.
