AO4310 Overview
Key Specifications
Package: SOIC
Mount Type: Surface Mount
Pins: 8
Max Operating Temp: 150 °C
Description
The AO4310 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching losses are minimized due to an extremely low combination of RDS(ON) and addition,switching behavior is well controlled with a "Schottky style" soft recovery body diode. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 100% UIS Tested 100% Rg Tested 36V 27A < 3.1mΩ < 4.2mΩ Top View D D D D SOIC-8 Bottom View D G S S S Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C TA=25°C Power Dissipation B TA=70°C VGS ID IDM IAS, IAR EAS, EAR PD Junction and Storage Temperature Range TJ, TSTG G Maximum 36 ±20 27 22 390 67 224 3.6 2.3 -55 to 150 S Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Typ 27 52 10 Max 35 65 15 Units V V A A mJ W °C Units °C/W °C/W °C/W Rev 0: February 2011 Page 1 of 6 AO4310 Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 36 V IDSS Zero Gate Voltage Drain Current VDS=36V, VGS=0V TJ=55°C 1 µA 5 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V 100 nA VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.2 1.8 2.3 V ID(ON) On state drain current VGS=10V, VDS=5V 390 A RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A TJ=125°C 2.6 3.1 mΩ 3.7 4.5 VGS=4.5V, ID=20A 3.3 4.2 mΩ gFS Forward Transconductance VDS=5V, ID=20A 151 S VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 1 V IS Maximum Body-Diod.
