Datasheet Details
| Part number | AO4423L |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 235.75 KB |
| Description | 30V P-Channel MOSFET |
| Datasheet | AO4423L AO4423 Datasheet (PDF) |
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Overview: AO4423/AO4423L 30V P-Channel MOSFET General.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | AO4423L |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 235.75 KB |
| Description | 30V P-Channel MOSFET |
| Datasheet | AO4423L AO4423 Datasheet (PDF) |
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The AO4423/AO4423L uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating.
This device is suitable for use as a load switch or in PWM applications.
Product Summary VDS (V) = -30V ID = -17A RDS(ON) < 6.2mΩ RDS(ON) < 7.2mΩ (VGS = -20V) (VGS = -20V) (VGS = -10V) * RoHS and Halogen-Free pliant ESD Protected 100% UIS tested 100% Rg tested (note *) Top View D D D D SOIC-8 Bottom View G S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current AF TA=70°C ID Pulsed Drain Current B IDM Power Dissipation A TA=25°C TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter Maximum Junction-to-Ambient AF Maximum Junction-to-Ambient A Maximum Junction-to-Lead C t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL G Maximum -30 ±25 -17 -14 -182 3.1 2 -55 to 150 Typ 26 50 14 D S Max 40 75 24 Units V V A W °C Units °C/W °C/W °C/W Rev.12.0 August 2017 .aosmd, Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=-250µA, VGS=0V VDS=-30V, VGS=0V IGSS VGS(th) ID(ON) Gate-Body leakage current Gate Threshold Voltage On state drain current VDS=0V, VGS=±20V VDS=0V, VGS=±25V VDS=VGS ID=-250µA VGS=-10V, VDS=-5V VGS=-20V, ID=-15A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=-10V, ID=-15A VGS=-6V, ID=-10A Forward Transconductance VDS=-5V, ID=-15A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current TJ=55°C TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Qgs Qgd t
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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AO4423 | P-Channel MOSFET | Freescale |
 |
AO4423 | P-Channel MOSFET | VBsemi |
 |
AO4423 | P-Channel MOSFET | Kexin |
| Part Number | Description |
|---|---|
| AO4423 | 30V P-Channel MOSFET |
| AO4420 | 30V N-Channel MOSFET |
| AO4420A | 30V N-Channel MOSFET |
| AO4420L | N-Channel FET |
| AO4421 | 60V P-Channel MOSFET |
| AO4422 | N-Channel MOSFET |
| AO4422A | N-Channel FET |
| AO4425 | 38V P-Channel MOSFET |
| AO4427 | P-Channel FET |
| AO4429 | P-Channel FET |