AO4472 Datasheet | Alpha & Omega Semiconductors

Description The AO4472 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity, body diode .. characteristics and ultra-low gate resistance. This device is ideally suited for use as a low side switch in Notebook CPU core power conversion. Standard Product AO4472 is Pbfree (meets ROHS & Sony 259 specifications). AO4472L is a Green Product ordering option. AO4472 and AO4472L are electrically identical. Features VDS (V) = 30V ID = 19A (VGS = 10V) RDS(ON) < 5.2mΩ (VGS = 10V) RDS(ON) < 7.2mΩ (VGS = 4.5V) D S S S G D D D D SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation Maximum 30 ±20 19 16 80 3 2.1 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 31 59 16 Max 40 75 24 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) .. Conditions ID=250µA, VGS=0V VDS=24V, VGS=0V TJ=55°C VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=19A TJ=125°C VGS=4.5V, ID=15A VDS=5V, ID=19A Min 30 Typ Max Units V Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance Forward Transconductance 1 5 100 1 80 4.3 6.1 6 82 0.7 1 4.5 6060 7270 960 530 0.9 124 58 5.2 7.5 7.2 1.9 2.5 µA n A V A mΩ mΩ S V A p F p F p F Ω n C n C n C n C RDS(ON) g FS VSD IS IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance...