AO4474 Datasheet | Alpha & Omega Semiconductors

Description The AO4474 uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is suitable for use as a high side switch in SMPS and .. general purpose applications. Standard Product AO4474 is Pb-free (meets ROHS & Sony 259 specifications). AO4474L is a Green Product ordering option. AO4474 and AO4474L are electrically identical. Features VDS (V) = 30V ID = 13.4A (VGS = 10V) RDS(ON) <11.5mΩ (VGS = 10V) RDS(ON) < 13.5mΩ (VGS = 4.5V) D S S S G D D D D SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current B TA=25°C Power Dissipation TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A C Maximum Junction-to-Lead TA=25°C TA=70°C IDSM IDM PD TJ, TSTG Maximum 30 ±12 13.4 10.7 60 3.7 2.4 -55 to 150 Units V V A W °C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 28 57 16 Max 34 71 23 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=24V, VGS=0V TJ=55°C VDS=0V, VGS= ±12V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=13.4A Static Drain-Source On-Resistance VGS=4.5V, ID=10A g FS VSD IS Forward Transconductance VDS=5V, ID=13.4A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current TJ=125°C 1 60 9.5 16.2 11 40 0.74 1.0 5 1210 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 330 85 1.2 22 VGS=10V, VDS=15V, ID=13.4A 10 3.7 2.7 10 VGS=10V, VDS=15V, RL=1.1Ω, RGEN=3Ω IF=13.4A, d I/dt=100A/µs 6.3 21 2.8 36 47 45 1.6 28 1452 11.5 18 13.5 1.55 Min 30 1 5 0.1 2.5 Typ Max Units V u A µA V A mΩ mΩ S V A p F p F p F Ω n C n C n C n C ns ns ns ns ns n C STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) .. Zero Gate Voltage Drain Current Gate-Body leakage current Gate...