Datasheet Details
| Part number | AO4496 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 395.65 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AO4496_AlphaOmegaSemiconductors.pdf |
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Overview: AO4496 30V N-Channel MOSFET General.
| Part number | AO4496 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 395.65 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AO4496_AlphaOmegaSemiconductors.pdf |
|
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The AO4496 uses advanced trench technology to provide excellent RDS(ON) with low gate charge.
This device is suitable for use as a DC-DC converter application.
Product Summary VDS (V) = 30V ID = 10A RDS(ON) < 19.5mΩ RDS(ON) < 26mΩ (VGS = 10V) (VGS = 10V) (VGS = 4.5V) 100% UIS Tested 100% Rg Tested SOIC-8 Top View Bottom View D D D D D G S S S G S Absolute Maximum Ratings TJ=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current A TA=70°C ID Pulsed Drain Current B IDM Avalanche Current G IAR Repetitive avalanche energy L=0.1mH G EAR Power Dissipation A TA=25°C TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 10 7.5 50 17 14 3.1 2.0 -55 to 150 Thermal Characteristics Parameter Symbol Typ Max Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A Steady State RqJA 31 59 40 75 Maximum Junction-to-Lead C Steady State RqJL 16 24 Units V V A mJ W °C Units °C/W °C/W °C/W Rev 5.1: March 2024 .aosmd.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
AO4496 | N-Channel MOSFET | Kexin |
| Part Number | Description |
|---|---|
| AO4490 | N-Channel MOSFET |
| AO4492 | 30V N-Channel MOSFET |
| AO4494 | 30V N-Channel MOSFET |
| AO4498 | 30V N-Channel MOSFET |
| AO4498E | 30V N-Channel MOSFET |
| AO4400 | N-Channel MOSFET |
| AO4401 | P-Channel MOSFET |
| AO4402 | 20V N-Channel MOSFET |
| AO4402G | 20V N-Channel MOSFET |
| AO4403 | 30V P-Channel MOSFET |