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AO4496 - N-Channel MOSFET

Datasheet Summary

Features

  • s.
  • VDS (V) = 30V.
  • ID = 10 A (VGS = 10V).
  • RDS(ON) < 19.5mΩ (VGS = 10V).
  • RDS(ON) < 26mΩ (VGS = 4.5V) SOP-8 +0.040.21 -0.02 D MOSFET Unit:mm 1.50 0.15 1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain G S.
  • Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current Pulsed Drain Current Avalanche Current TA=25℃ TA=70℃ Repetitive Avalanche Energy Power Dissipation Thermal Resistance. Junction- to.

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Datasheet Details

Part number AO4496
Manufacturer Kexin
File Size 1.51 MB
Description N-Channel MOSFET
Datasheet download datasheet AO4496 Datasheet
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Full PDF Text Transcription

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SMD Type N-Channel MOSFET AO4496 (KO4496) ■ Features ● VDS (V) = 30V ● ID = 10 A (VGS = 10V) ● RDS(ON) < 19.5mΩ (VGS = 10V) ● RDS(ON) < 26mΩ (VGS = 4.5V) SOP-8 +0.040.21 -0.02 D MOSFET Unit:mm 1.50 0.15 1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain G S ■ Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current Pulsed Drain Current Avalanche Current TA=25℃ TA=70℃ Repetitive Avalanche Energy Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Lead Junction Temperature Storage Temperature Range L=0.1mH TA=25℃ TA=70℃ t ≤ 10s Steady-State Symbol VDS VGS ID IDM IAR EAR PD RthJA RthJL TJ Tstg Rating 30 ±20 10 7.5 50 17 14 3.
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