AO4578 Datasheet | Alpha & Omega Semiconductors

Description - Latest Trench Power Alpha MOS (αMOS LV) technology - Very Low RDS(ON) at 4.5V VGS - Low Gate Charge - High Current Capability - Ro HS and Halogen-Free pliant Product Summary ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 30V 20A < 5.7mΩ < 9mΩ Application - DC/DC Converters in puting, Servers, and POL - Isolated DC/DC Converters in Tele and Industrial SOIC-8 Top View D D D 100% UIS Tested 100% Rg Tested Bottom View Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Maximum 30 ±20 Units V Continuous Drain Current Pulsed Drain Current C Avalanche Current C TA=25° C TA=70° C ID IDM IAS EAS VSPIKE PD TJ, TSTG 20 15 120 40 8 36 3.1 2 -55 to 150 A m J V W ° C A Avalanche energy L=0.01m H C VDS Spike Power Dissipation B 100ns TA=25° C TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 31 59 16 Max 40 75 24 Units ° C/W ° C/W ° C/W Rev.1.0: August 2013 .aosmd. Page 1 of 5 Free Datasheet http://../ Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V C TJ=55° VDS=0V, VGS=±20V VDS=VGS，ID=250µA VGS=10V, ID=20A RDS(ON) g FS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=20A Forward Transconductance Diode Forward Voltage VDS=5V, ID=20A IS=1A,VGS=0V C TJ=125° 1.4 1.8 4.7 6.5 7.2 62 0.7 1 4.2 1128 VGS=0V, VDS=15V, f=1MHz f=1MHz 0.7 435 59 1.4 16.2 VGS=10V, VDS=15V, ID=20A 7.4 4.3 2.3 5.5 VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω IF=20A, d I/dt=500A/µs...