Datasheet4U Logo Datasheet4U.com

AO4630 Datasheet MOSFET

Manufacturer: Alpha & Omega Semiconductors

Overview: AO4630 30V plementary MOSFET General.

General Description

AO4630 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

This plementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.

Product Summary N-Channel VDS= 30V ID= 7A (VGS=10V) RDS(ON) < 23mΩ (VGS=10V) < 28mΩ (VGS=4.5V) < 36mΩ (VGS=2.5V) 100% UIS Tested 100% Rg Tested P-Channel -30V -5A (VGS=-10V) RDS(ON) < 48mΩ (VGS=-10V) < 57mΩ (VGS=-4.5V) < 78mΩ (VGS=-2.5V) 100% UIS Tested 100% Rg Tested Top View SOIC-8 Bottom View Pin1 Orderable Part Number AO4630 D1 D2 Top View S1 1 G1 2 S2 3 G2 4 8 7 6 5 Package Type SO-8 D1 D1 D2 G1 D2 G2 S1 S2 N-channel P-channel Form Tape & Reel Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max N-channel Max P-channel Drain-Source Voltage VDS 30 -30 Gate-Source Voltage VGS ±12 ±12 Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C ID IDM IAS EAS 7 5.6 30 14 10 -5 -4 -25 18 16 VDS Spike 10µs VSPIKE 36 -36 TA=25°C Power Dissipation B TA=70°C PD 2 1.3 Junction and Storage Temperature Range TJ, TSTG -55 to 150 Units V V A A mJ V W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Typ 48 74 32 Max 62.5 90 40 Units °C/W °C/W °C/W Rev.1.0: Nov 2015 .aosmd.

More Datasheets from Alpha & Omega Semiconductors

Part Number Description
AO4600 MOSFET
AO4601 MOSFET
AO4603 MOSFET
AO4604 MOSFET
AO4606 30V Complementary MOSFET
AO4607 MOSFET
AO4609 MOSFET
AO4610 MOSFET
AO4611 MOSFET
AO4612 MOSFET

AO4630 Distributor