AO6408
AO6408 is N-Channel MOSFET manufactured by Alpha & Omega Semiconductors.
Description
The AO6408 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It offers operation over a wide gate drive range from 1.8V to 12V. It is ESD protected. This device is suitable for use as a load switch. Standard product AO6408 is Pbfree (meets ROHS & Sony 259 specifications). AO6408L is a Green Product ordering option. AO6408 and AO6408L are electrically identical.
Features
VDS (V) = 20V (VGS = 10V) ID = 8.8A RDS(ON) < 18m Ω (VGS = 10V) RDS(ON) < 20m Ω (VGS = 4.5V) RDS(ON) < 25m Ω (VGS = 2.5V) RDS(ON) < 32m Ω (VGS = 1.8V) ESD Rating: 2000V HBM
TSOP-6 Top View
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1 6 2 5 3 4
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation
Maximum 20 ±12 8.8 7 40 2 1.28 -55 to 150
Units V V A
VGS TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG
W °C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C
Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL
Typ 47.5 74 37
Max 62.5 110 40
Units °C/W °C/W °C/W
Alpha & Omega Semiconductor, Ltd.
AO6408, AO6408L
Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS BVGSO VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Source leakage current Gate-Source Breakdown Voltage Gate Threshold Voltage On state drain current Conditions ID=250µA, VGS=0V VDS=16V, VGS=0V TJ=55°C VDS=0V, VGS=±10V VDS=0V, IG=±250u A VDS=VGS ID=250µA VGS=4.5V, VDS=5V VGS=10V, ID=8.8A TJ=125°C RDS(ON) VGS=4.5V, ID=8A VGS=2.5V, ID=6A VGS=1.8V, ID=4A Forward Transconductance VDS=5V, ID=8.8A Diode Forward Voltage IS=1A Maximum Body-Diode Continuous Current Static Drain-Source On-Resistance ±12 0.5 40 14.4 18.5 16 20.5 25.6 33 0.72 18 23 20 25 32 1 3 2200 Min 20 10 25 ±10...
