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AO6408 - N-Channel MOSFET

Key Features

  • s.
  • VDS (V) = 20V.
  • ID =8.8 A (VGS = 10V).
  • RDS(ON) ＜ 18mΩ (VGS = 10V).
  • RDS(ON) ＜ 20mΩ (VGS = 4.5V).
  • RDS(ON) ＜ 25mΩ (VGS = 2.5V).
  • RDS(ON) ＜ 32mΩ (VGS = 2.5V).
  • ESD Rating: 2000V HBM ( SOT-23-6 ) 0.4+0.1 -0.1 6 5 4 1 2 3 +0.01 -0.01 +0.2 -0.1 D 0-0.1 +0.1 0.68 -0.1 +0.2 1.6 -0.1 +0.2 2.8 -0.1 +0.1 1.1 -0.1 0.55 0.4 MOSFET Unit: mm 0.15 +0.02 -0.02 1 Drain 4 Source 2 Drain 5 Drain 3 Gate 6 Drain G S.
  • Absolute Maximum Ratings Ta = 25℃ Drain-Sour.

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SMD Type N-Channel MOSFET AO6408 (KO6408) ■ Features ● VDS (V) = 20V ● ID =8.8 A (VGS = 10V) ● RDS(ON) ＜ 18mΩ (VGS = 10V) ● RDS(ON) ＜ 20mΩ (VGS = 4.5V) ● RDS(ON) ＜ 25mΩ (VGS = 2.5V) ● RDS(ON) ＜ 32mΩ (VGS = 2.5V) ● ESD Rating: 2000V HBM ( SOT-23-6 ) 0.4+0.1 -0.1 6 5 4 1 2 3 +0.01 -0.01 +0.2 -0.1 D 0-0.1 +0.1 0.68 -0.1 +0.2 1.6 -0.1 +0.2 2.8 -0.1 +0.1 1.1 -0.1 0.55 0.4 MOSFET Unit: mm 0.15 +0.02 -0.02 1 Drain 4 Source 2 Drain 5 Drain 3 Gate 6 Drain G S ■ Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current Pulsed Drain Current Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.