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AO6409 - P-Channel MOSFET

Key Features

  • ƽ VDS (V) =-20V ƽ ID =-5.5A (VGS =-4.5V) ƽ RDS(ON) ˘ 41m¡ (VGS =-4.5V) ƽ RDS(ON) ˘ 53m¡ (VGS =-2.5V) ƽ RDS(ON) ˘ 65m¡ (VGS =-1.8V) ƽ ESD Rating: 2000V HBM D ( SOT-23-6 ) 0.4+0.1 -0.1 6 5 4 1 2 3 +0.01 -0.01 +0.2 -0.1 G S      1.6   2.8       MOSFET 8QLW PP    1 Drain 4 Source 2 Drain 5 Drain 3 Gate 6 Drain Ƶ Absolute Maximum Ratings Ta = 25ć Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Cur.

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SMD Type P-Channel MOSFET AO6409 (KO6409) Ƶ Features ƽ VDS (V) =-20V ƽ ID =-5.5A (VGS =-4.5V) ƽ RDS(ON) ˘ 41m¡ (VGS =-4.5V) ƽ RDS(ON) ˘ 53m¡ (VGS =-2.5V) ƽ RDS(ON) ˘ 65m¡ (VGS =-1.8V) ƽ ESD Rating: 2000V HBM D ( SOT-23-6 ) 0.4+0.1 -0.1 6 5 4 1 2 3 +0.01 -0.01 +0.2 -0.1 G S      1.6   2.8       MOSFET 8QLW PP    1 Drain 4 Source 2 Drain 5 Drain 3 Gate 6 Drain Ƶ Absolute Maximum Ratings Ta = 25ć Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current Pulsed Drain Current Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.