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AO6409A Datasheet P-channel MOSFET

Manufacturer: Alpha & Omega Semiconductors

Overview: AO6409A 20V P-Channel MOSFET General.

General Description

Product Summary The AO6409A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.

This device is suitable for use as a load switch applications.

VDS ID (at VGS=-4.5V) RDS(ON) (at VGS= -4.5V) RDS(ON) (at VGS= -2.5V) RDS(ON) (at VGS= -1.8V) ESD protected -20V -5.5A < 41mW < 53mW < 65mW TSOP6 Top View Bottom View Top View D1 D2 G3 6D 5D 4S G Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C ID IDM TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum -20 ±8 -5.5 -4.2 -30 2.1 1.3 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead t ≤ 10s Steady-State Steady-State Symbol RqJA RqJL Typ 48 75 37 Max 60 90 45 D S Units V V A W °C Units °C/W °C/W °C/W Rev 4.0: January 2019 .aosmd.

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AO6409A Distributor