AO6409L Datasheet P-channel MOSFET

Manufacturer: Alpha & Omega Semiconductors

Overview: Rev 2: Nov 2004 AO6409, AO6409L ( Green Product ) P-Channel Enhancement Mode Field Effect.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

The AO6409 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.

This device is suitable for use as a load switch or in PWM applications.

It is ESD protected.

VDS (V) = -20V ID = -5 A RDS(ON) < 45mΩ (VGS = -4.5V) RDS(ON) < 56mΩ (VGS = -2.5V) RDS(ON) < 75mΩ (VGS = -1.8V) ESD Rating: 3000V HBM TSOP6 Top View D D G 1 6 2 5 3 4 D D S G D www. DataSheet4U. com S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum -20 ±8 -5.0 -4.2 -30 2 1.28 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD.

Part Number	Description	Manufacturer
AO6409	P-Channel MOSFET	Kexin
AO6409A	P-Channel MOSFET	VBsemi
AO6409A	P-Channel MOSFET	Kexin