RDS(ON) < 58mΩ (VGS =-4.5V)
( SOT-23-6 ) 0.4+0.1
-0.1
6
5
4
1
2
3
+0.01 -0.01 +0.2 -0.1
+0.2 1.6 -0.1
+0.2 2.8 -0.1
0.55
0.4
MOSFET
Unit: mm 0.15 +0.02
-0.02
+0.1 1.1 -0.1
D
G S.
Absolute Maximum Ratings Ta = 25℃
Drain-Source Voltage Gate-Source Voltage
Parameter
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Thermal Resistance. Junction- to-Ambient
Thermal Resistanc.
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SMD Type
P-Channel MOSFET AO6403 (KO6403)
■ Features
● VDS (V) =-30V ● ID =-6 A (VGS =-10V) ● RDS(ON) < 35mΩ (VGS =-10V) ● RDS(ON) < 58mΩ (VGS =-4.5V)
( SOT-23-6 ) 0.4+0.1
-0.1
6
5
4
1
2
3
+0.01 -0.01 +0.2 -0.1
+0.2 1.6 -0.1
+0.2 2.8 -0.1
0.55
0.4
MOSFET
Unit: mm 0.15 +0.02
-0.02
+0.1 1.1 -0.1
D
G S
■ Absolute Maximum Ratings Ta = 25℃
Drain-Source Voltage Gate-Source Voltage
Parameter
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Thermal Resistance.Junction- to-Ambient
Thermal Resistance.Junction- to-Lead Junction Temperature Junction Storage Temperature Range
TA=25°C TA=70°C
TA=25°C TA=70°C t ≤ 10s Steady-State
Symbol VDS VGS ID
IDM PD
RthJA RthJL
TJ Tstg
0-0.1 +0.1 0.68
-0.