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AO6402 Datasheet 30v N-channel MOSFET

Manufacturer: Alpha & Omega Semiconductors

Overview: AO6402 30V N-Channel MOSFET General.

General Description

Product Summary The AO6402 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

This device may be used as a load switch or in PWM applications.

VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS =4.5V) 30V 5A < 31mΩ < 43mΩ TSOP6 Top View Bottom View Top View D D D D G S G Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA=25°C TA=70°C ID Pulsed Drain Current C IDM TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 5 4 20 1.25 0.8 -55 to 150 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RθJA 82 110 Maximum Junction-to-Lead Steady-State RθJL 56 Max 100 130 70 D S Units V V A W °C Units °C/W °C/W °C/W Rev 8: February 2011 .aosmd.

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