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AO6409A - P-Channel MOSFET

Key Features

  • s.
  • VDS (V) =-20V.
  • ID =-5.5A (VGS =-4.5V).
  • RDS(ON) ＜ 41mΩ (VGS =-4.5V).
  • RDS(ON) ＜ 53mΩ (VGS =-2.5V).
  • RDS(ON) ＜ 65mΩ (VGS =-1.8V).
  • ESD Rating: 2000V HBM D ( SOT-23-6 ) 0.4+0.1 -0.1 6 5 4 1 2 3 +0.01 -0.01 +0.2 -0.1 G S 0-0.1 +0.1 0.68 -0.1 +0.1 1.1 -0.1 +0.2 1.6 -0.1 +0.2 2.8 -0.1 0.55 0.4 MOSFET Unit: mm 0.15 +0.02 -0.02 1 Drain 4 Source 2 Drain 5 Drain 3 Gate 6 Drain.
  • Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Pa.

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SMD Type P-Channel MOSFET AO6409A (KO6409A) ■ Features ● VDS (V) =-20V ● ID =-5.5A (VGS =-4.5V) ● RDS(ON) ＜ 41mΩ (VGS =-4.5V) ● RDS(ON) ＜ 53mΩ (VGS =-2.5V) ● RDS(ON) ＜ 65mΩ (VGS =-1.8V) ● ESD Rating: 2000V HBM D ( SOT-23-6 ) 0.4+0.1 -0.1 6 5 4 1 2 3 +0.01 -0.01 +0.2 -0.1 G S 0-0.1 +0.1 0.68 -0.1 +0.1 1.1 -0.1 +0.2 1.6 -0.1 +0.2 2.8 -0.1 0.55 0.4 MOSFET Unit: mm 0.15 +0.02 -0.02 1 Drain 4 Source 2 Drain 5 Drain 3 Gate 6 Drain ■ Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current Pulsed Drain Current Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.