AO6414 Datasheet | Alpha & Omega Semiconductors

Description The AO6414 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It offers operation over a wide gate drive range from 2.5V to 12V. This device is suitable for use as a load switch. Standard product AO6414 is Pb-free (meets ROHS & Sony 259 specifications). AO6414L is a Green Product ordering option. AO6414 and AO6414L are electrically identical. Features VDS (V) = 55V ID = 2.4A (VGS = 4.5V) RDS(ON) < 160m Ω (VGS = 4.5V) RDS(ON) < 200m Ω (VGS = 2.5V) TSOP-6 Top View .. 1 6 2 5 3 4 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain TA=25°C Current A TA=70°C ID Pulsed Drain Current Maximum 55 ±12 2.3 1.9 9 1.56 1.1 -55 to 150 Units V V A IDM PD TJ, TSTG TA=25°C Power Dissipation TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C W °C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 58 94 37 Max 80 120 50 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AO6414 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS IGSS VGS(th) ID(ON) RDS(ON) g FS VSD IS Zero Gate Voltage Drain Current Gate-Source leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=2.5V, ID=1.5A Forward Transconductance VDS=5V, ID=2.4A Diode Forward Voltage IS=1A Maximum Body-Diode Continuous Current Conditions ID=10m A, VGS=0V VDS=44V, VGS=0V TJ=55°C VDS=0V, VGS=±12V VDS=VGS ID=250μA VGS=4.5V, VDS=5V VGS=4.5V, ID=2.4A TJ=125°C 0.6 10 1.3 125 175 157 11 0.78 Min 55 0.002 1 5 ±100 2 160 210 200 1 1.9 300 Typ Max Units V μA n A V A mΩ mΩ S V A p F p F p F Ω n C n C n C ns ns ns ns ns n C DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Reverse Transfer Capacitance Crss Rg Gate...