AO6419
AO6419 is P-Channel MOSFET manufactured by Alpha & Omega Semiconductors.
Description
The AO6419 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO6419 is Pb-free (meets ROHS & Sony 259 specifications). AO6419L is a Green Product ordering option. AO6419 and AO6419L are electrically identical.
Features
VDS (V) = -30V ID = -5 A (VGS = -10V) RDS(ON) < 52mΩ (VGS = -10V) RDS(ON) < 87mΩ (VGS = -4.5V) RDS(ON) < 110mΩ (VGS = -3.5V)
D TSOP6 Top View
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1 6 2 5 3 4
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A
Maximum -30 ±20 -5 -4.2 -20 2 1.4 -55 to 150
Units V V A
TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG
W °C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C
Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL
Typ 47.5 74 37
Max 62.5 110 50
Units °C/W °C/W °C/W
Alpha & Omega Semiconductor, Ltd.
Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID=-250 µA, VGS=0V VDS=-24V, VGS=0V TJ=55°C VDS=0V, VGS=±20V VDS=VGS ID=-250 µA VGS=-4.5V, VDS=-5V VGS=-10V, ID=5.0A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=-4.5V, ID=-4A VGS=-3.5V, ID=-1A g FS VSD IS Forward Transconductance VDS=-5V, ID=-5A 6 IS=-1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current -1 -20 39 54 67 85 8.6 -0.77 -1 -2.8 700 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 120 75 10 14.7 VGS=-10V, VDS=-15V, ID=-5A 7.6 2 3.8 8.3 VGS=-10V, VDS=-15V, RL=3Ω, RGEN=3Ω IF=-5A, d I/dt=100A/µs IF=-5A, d I/dt=100A/µs
Min...