AO6801 Datasheet | Alpha & Omega Semiconductors

Description The AO6801 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM .. applications. Standard Product AO6801 is Pb-free (meets ROHS & Sony 259 specifications). AO6801L is a Green Product ordering option. AO6801 and AO6801L are electrically identical. Features VDS (V) = -30V ID = -2.3 A (VGS = -10V) RDS(ON) < 135mΩ (VGS = -10V) RDS(ON) < 185mΩ (VGS = -4.5V) RDS(ON) < 265mΩ (VGS = -2.5V) D1 TSOP6 Top View G1 S2 G2 1 6 2 5 3 4 D1 S1 D2 G1 S1 G2 D2 S2 Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation Maximum -30 ±12 -2.3 -1.8 -20 1.15 0.73 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C Symbol A A t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 78 106 64 Max 110 150 80 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) .. Conditions ID=-250 µA, VGS=0V VDS=-24V, VGS=0V TJ=55°C VDS=0V, VGS=±12V VDS=VGS ID=-250 µA VGS=-4.5V, VDS=-5V VGS=-10V, ID=-2.3A TJ=125°C VGS=-4.5V, ID=-2A VGS=-2.5V, ID=-1A VDS=-5V, ID=-2.3A Min -30 Typ Max Units V Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current -1 -5 ±100 -0.6 -20 107 154 135 195 8 -0.85 -1 -1.35 409 135 190 185 265 -1 -1.4 µA n A V A mΩ mΩ mΩ S V A p F p F p F Ω n C n C n C ns ns ns ns ns n C RDS(ON) Static Drain-Source On-Resistance g FS VSD IS Forward Transconductance IS=-1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss...