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AO6800 Datasheet 30v Dual N-channel MOSFET

Manufacturer: Alpha & Omega Semiconductors

Overview: AO6800 30V Dual N-Channel MOSFET General.

General Description

Product Summary The AO6800 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

VDS ID (at VGS=10V) RDS(ON) (at VGS= 10V) RDS(ON) (at VGS = 4.5V) RDS(ON) (at VGS = 2.5V) 30V 3.4A < 60mW < 70mW < 90mW TSOP6 Top View Bottom View D1 Top View G1 1 6 S2 2 5 G2 3 4 Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA=25°C TA=70°C ID Pulsed Drain Current C IDM TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG D1 S1 D2 G1 Maximum 30 ±12 3.4 2.7 20 1.15 0.73 -55 to 150 G2 S1 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 78 106 Maximum Junction-to-Lead Steady-State RqJL 64 Max 110 150 80 D2 S2 Units V V A W °C Units °C/W °C/W °C/W Rev 5.1: March 2024 .aosmd.

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