| Part Number | AO6800 Datasheet |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| Overview | Product Summary The AO6800 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load sw. Junction-to-Lead Steady-State RqJL 64 Max 110 150 80 D2 S2 Units V V A W °C Units °C/W °C/W °C/W Rev 5.1: March 2024 Page 1 of 5 AO6800 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain. |
AO6800 Datasheet and Specifications PDF
The AO6800 is a 30V Dual N-Channel MOSFET.
| Part Number | AO6800 Datasheet |
|---|---|
| Description | Dual N-Channel MOSFET |
| Manufacturer | Kexin Semiconductor |
| Overview |
SMD Type
Dual N-Channel MOSFET AO6800 (KO6800)
■ Features
● VDS (V) = 30V ● ID =3.4 A (VGS = 10V) ● RDS(ON) ＜ 60mΩ (VGS = 10V) ● RDS(ON) ＜ 70mΩ (VGS = 4.5V) ● RDS(ON) ＜ 90mΩ (VGS = 2.5V)
( SOT-23-6.
* VDS (V) = 30V * ID =3.4 A (VGS = 10V) * RDS(ON) ＜ 60mΩ (VGS = 10V) * RDS(ON) ＜ 70mΩ (VGS = 4.5V) * RDS(ON) ＜ 90mΩ (VGS = 2.5V) ( SOT-23-6 ) 0.4+0.1 -0.1 6 5 4 1 2 3 +0.1 -0.1 +0.2 -0.1 +0.2 1.6 -0.1 +0.2 2.8 -0.1 0.55 0.4 MOSFET Unit: mm 0.15 +0.02 -0.02 +0.1 1.1 -0.1 D1 D2 G1 G2 . |
| Part Number | AO6800 Datasheet |
|---|---|
| Description | Dual N-Channel MOSFET |
| Manufacturer | VBsemi |
| Overview |
AO6800
Dual N-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.022 at VGS = 4.5 V 20
0.028 at VGS = 2.5 V
ID (A)a 6.0 5.0
Qg (Typ.) 1.8 nC
FEATURES
• Halogen-fre.
* Halogen-free According to IEC 61249-2-21 Definition * TrenchFET® Power MOSFET * 100 % Rg Tested * Compliant to RoHS Directive 2002/95/EC TSOP-6 Top View G1 1 6 D1 3 mm S2 2 5 S1 G2 3 4 D2 2.85 mm D1 D2 G1 G2 S1 N-Channel MOSFET S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA =. |