Datasheet Summary
AO7801 Dual P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO7801 uses advanced trench technology to provide excellent RDS(ON), low gate charge, and operation with gate voltages as low as 1.8V, in the small SOT363 footprint. It can be used for a wide variety of applications, including load switching, low current inverters and low current DC-DC converters. It is ESD protected to 2KV HBM.
Features
VDS (V) = -20V ID = -0.6A (VGS = -4.5V)
RDS(ON) < 520mΩ (VGS = -4.5V) RDS(ON) < 700mΩ (VGS = -2.5V) RDS(ON) < 950mΩ (VGS = -1.8V)
SC70-6L (SOT-363)
Top View
Bottom View
Pin1
S1 1 6 G1 2 5 D2 3...