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AO8822 Datasheet 20v Common-drain Dual N-channel MOSFET

Manufacturer: Alpha & Omega Semiconductors

Overview: AO8822 20V mon-Drain Dual N-Channel MOSFET General.

General Description

Product Summary The AO8822 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating.

This device is suitable for use as a unidirectional or bi-directional load switch, facilitated by its mon-drain configuration.

VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) RDS(ON) (at VGS = 3.6V) RDS(ON) (at VGS = 2.5V) ESD Protected 20V 7A < 18mW < 22mW < 23mW < 27mW TSSOP8 D Top View Bottom View Pin 1 D1/D2 1 S1 2 S1 3 G1 4 8 D1/D2 7 S2 6 5 S2 G G2 G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA=25°C TA=70°C ID Pulsed Drain Current C IDM TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 20 ±12 7 6 30 1.5 1 -55 to 150 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 63 101 Maximum Junction-to-Lead Steady-State RqJL 64 Max 83 130 83 D S Units V V A W °C Units °C/W °C/W °C/W Rev 6.1 : August 2023 .aosmd.

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