Datasheet4U Logo Datasheet4U.com

AOB403 Datasheet P-channel MOSFET

Manufacturer: Alpha & Omega Semiconductors

Overview: AOB403 P-Channel Enhancement Mode Field Effect Transistor General.

General Description

The AOB403 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance.

With the excellent thermal resistance of the D2-PAK package, this device is well suited for high current load applications.

Standard product AOB403 is Pb-free (meets ROHS & Sony 259 specifications).

Key Features

  • VDS (V) = -60V ID = -30A (VGS=-10V) RDS(ON) < 44mΩ (VGS = -10V ) @ 30A RDS(ON) < 55mΩ (VGS = -4.5V ) @ 20A TO-263 D2-PAK D Top View Drain Connected to Tab G S GD S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy L=0.1mH C ID IDM IAR EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power.

AOB403 Distributor