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AOB409L Datasheet 60v P-channel MOSFET

Manufacturer: Alpha & Omega Semiconductors

Overview: AOB409L 60V P-Channel MOSFET General.

General Description

The AOB409L bines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).This device is ideal for boost converters and synchronous rectifiers for consumer, tele, industrial power supplies and LED backlighting.

Product Summary VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS =-4.5V) 100% UIS Tested 100% Rg Tested -60V -31.5A < 38mΩ < 50mΩ TO-263 Top View D2PAK Bottom View D D D S G G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.1mH C IDSM IAS, IAR EAS, EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG G Maximum -60 ±20 -31.5 -22 -85 -5 -4 37 68 83.3 41.6 2.1 1.3 -55 to 175 S Units V V A A A mJ W W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RθJA 11 47 Maximum Junction-to-Case Steady-State RθJC 1.5 Max Units 15 °C/W 60 °C/W 1.8 °C/W Rev 0: Sep.

2011 .aosmd.

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