Datasheet Details
| Part number | AOB5B65M1 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 562.87 KB |
| Description | IGBT |
| Datasheet | AOB5B65M1-AlphaOmegaSemiconductors.pdf |
|
|
|
Overview: AOT5B65M1/AOB5B65M1 650V, 5A Alpha IGBT TM With soft and fast recovery anti-parallel diode.
| Part number | AOB5B65M1 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 562.87 KB |
| Description | IGBT |
| Datasheet | AOB5B65M1-AlphaOmegaSemiconductors.pdf |
|
|
|
• Latest AlphaIGBT (α IGBT) technology • 650V breakdown voltage • Very fast and soft recovery freewheeling diode • High efficient turn-on di/dt controllability • Low VCE(SAT) enables high efficiencies • Low turn-off switching loss and softness • Very good EMI behavior • High short-circuit ruggedness Applications • Motor Drives • Home appliance applications such as refrigerators and washing machines • Fan, Pumps, Vacuum Cleaner • Other Hard Switching Applications TO-220 TO-263 D2PAK C Product Summary VCE IC (TC=100°C) VCE(sat) (TJ=25°C) 650V 5A 1.57V C AOT5B65M1 E C G E G AOB5B65M1 G E Orderable Part Number Package Type Form Minimum Order Quantity AOT5B65M1 TO220 Tube AOB5B65M1 TO263 Tape & Reel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT5B65M1/AOB5B65M1 1000 800 Units Collector-Emitter Voltage V CE 650 V Gate-Emitter Voltage V GE ±30 V Continuous Collector TC=25°C Current TC=100°C IC 10 A 5 Pulsed Collector Current, Limited by TJmax I CM 15 A Turn off SOA, VCE ≤ 650V, Limited by TJmax I LM 15 A Continuous Diode Forward Current TC=25°C TC=100°C IF 10 A 5 Diode Pulsed Current, Limited by TJmax I FM 15 A Short circuit withstanding time 1) VGE = 15V, VCC ≤ 400V, TJ ≤ 175°C t SC 5 µs Power Dissipation TC=25°C TC=100°C PD 83 42 W Junction and Storage Temperature Range T J , T STG -55 to 175 °C Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TL Thermal Characteristics 300 °C Parameter Symbol AOT5B65M1/AOB5B65M1 Units Maximum Junction-to-Ambient R θ JA 65 Maximum IGBT Junction-to-Case R θ JC 1.8 Maximum Diode Junction-to-Case R θ JC 4.7 1) Allowed number of short circuits: <1000;
time between short circuits: >1s.
°C/W °C/W °C/W Rev.1.0: April 2015 .aosmd.
| Part Number | Description |
|---|---|
| AOB5B60D | IGBT |
| AOB095A60L | N-Channel Power Transistor |
| AOB10B60D | 10A Alpha IGBT |
| AOB10B65M1 | 10A Alpha IGBT |
| AOB10N60 | 10A N-Channel MOSFET |
| AOB10T60P | N-Channel MOSFET |
| AOB1100L | 100V N-Channel Rugged Planar MOSFET |
| AOB11C60 | 11A N-Channel MOSFET |
| AOB11N60 | 11A N-Channel MOSFET |
| AOB11S60 | Power Transistor |