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AOC2870 Datasheet 20v Common-drain Dual N-channel MOSFET

Manufacturer: Alpha & Omega Semiconductors

Overview: AOC2870 20V mon-Drain Dual N-Channel AlphaMOS General.

General Description

• Trench Power AlphaMOS (αMOS LV) technology • Low RSS(ON) • Fully protected AlphaDFN package • With ESD protection to improve battery performance and safety • mon drain configuration for design simplicity • RoHS and Halogen-Free pliant Applications • Battery protection switch • Mobile device battery charging and discharging Product Summary VSS RSS(ON) (at VGS=4.5V) RSS(ON) (at VGS=4.0V) RSS(ON) (at VGS=3.7V) RSS(ON) (at VGS=3.1V) RSS(ON) (at VGS=2.5V) Typical ESD protection 20V < 11.9mΩ < 12.5mΩ < 14mΩ < 15.5mΩ < 20mΩ HBM Class 3A AlphaDFN 1.7x1.7_4 Top View Bottom View Top View Pin1 D1 D2 Bottom View 1 S1 2 G1 G1 G2 S2 G2 4 3 S1 S2 Orderable Part Number AOC2870 Package Type AlphaDFN 1.7x1.7_4 Form Tape & Reel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Source-Source Voltage VSS Gate-Source Voltage Source Current(DC) Note1 Source Current(Pulse) Note2 Power Dissipation Note1 VGS TA=25°C IS ISM TA=25°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 20 ±12 10 50 1.4 -55 to 150 Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient Maximum Junction-to-Ambient t ≤ 10s Steady-State RθJA Note 1.

Is rated value is based on bare silicon.

Mounted on 70mmx70mm FR-4 board.

More Datasheets from Alpha & Omega Semiconductors

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AOC2800 Common-Drain Dual N-Channel MOSFET
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