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AOCA32108E Datasheet Dual N-channel MOSFET

Manufacturer: Alpha & Omega Semiconductors

Overview: AOCA32108E 12V mon-Drain Dual N-Channel MOSFET General.

General Description

• Trench Power MOSFET technology • Ultra low RSS(ON) • With ESD protection to improve battery performance and safety • mon drain configuration for design simplicity • RoHS and Halogen-Free pliant Applications • Battery protection switch • Mobile device battery charging and discharging Product Summary VSS RSS(ON) (at VGS=4.5V) RSS(ON) (at VGS=3.8V) RSS(ON) (at VGS=3.1V) RSS(ON) (at VGS=2.5V) Typical ESD protection 12V < 3.8mΩ < 4mΩ < 4.6mΩ < 5.6mΩ HBM Class 2 AlphaDFN 3.01x1.52B_10 Top View Bottom View Pin1 Orderable Part Number AOCA32108E Top View 4 6 3 10 9 2 5 8 G1 17 Pin1 1, 2, 7, 8: Source(FET1) 5: Gate(FET1) Package Type AlphaDFN 3.01x1.52B_10 3, 4, 9, 10: Source(FET2) 6: Gate(FET2) Form Tape & Reel D1 D2 G2 S1 S2 Minimum Order Quantity 8000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Source-Source Voltage VSS Gate-Source Voltage Source Current(DC) Note1 Source Current(Pulse) Note2 Power Dissipation Note1 TA=25°C TA=25°C VGS IS ISM PD Junction and Storage Temperature Range TJ, TSTG Rating 12 ±8 25 140 3.1 -55 to 150 Units V V A W °C Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient Maximum Junction-to-Ambient t ≤ 10s Steady-State RqJA Note 1.

Is rated value is based on bare silicon.Mounted on 70mmx70mm FR-4 board.

Note 2.

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