Datasheet Details
| Part number | AOD254 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 363.83 KB |
| Description | N-Channel MOSFET |
| Datasheet | AOD254_AlphaOmegaSemiconductors.pdf |
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Overview: AOD254 150V N-Channel MOSFET General.
| Part number | AOD254 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 363.83 KB |
| Description | N-Channel MOSFET |
| Datasheet | AOD254_AlphaOmegaSemiconductors.pdf |
|
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The AOD254 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.Power losses are minimized due to an extremely low bination of RDS(ON) and Crss.In addition,switching behavior is well controlled with a soft recovery body diode.This device is ideal for boost converters and synchronous rectifiers for consumer, tele, industrial power supplies and LED backlighting.
Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS =4.5V) 100% UIS Tested 100% Rg Tested 150V 30A < 46mΩ < 53mΩ TO252 DPAK D Top View Bottom View D D S G G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG G S Maximum 150 ±20 30 22 60 4.5 3.6 12 7 115 57.5 2.5 1.6 -55 to 175 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RθJA 15 41 Maximum Junction-to-Case Steady-State RθJC 1 Max 20 50 1.3 Units V V A A A mJ W W °C Units °C/W °C/W °C/W Rev.1.0: April 2014 .aosmd.
Page 1 of 6 AOD254 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 150 IDSS Zero Gate Voltage Drain Current VDS=150V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS，ID=250µA 1.7 ID(ON) On state drain current VGS=10V, VDS=5V 60 VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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AOD254 | N-Channel MOSFET | INCHANGE |
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