Datasheet Details
| Part number | AOD2544 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 285.69 KB |
| Description | 150V N-Channel MOSFET |
| Datasheet | AOD2544-AlphaOmegaSemiconductors.pdf |
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Overview: AOD2544 150V N-Channel AlphaMOS General.
| Part number | AOD2544 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 285.69 KB |
| Description | 150V N-Channel MOSFET |
| Datasheet | AOD2544-AlphaOmegaSemiconductors.pdf |
|
|
|
• Latest Trench Power AlphaMOS (αMOS MV) technology • Very Low RDS(ON) • Low Gate Charge • Optimized for fast-switching applications • RoHS and Halogen-Free pliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 150V 23A < 54mΩ < 66mΩ Application • Synchronus Rectification in DC/DC and AC/DC Converters • Isolated DC/DC Converters in Tele and Industrial 100% UIS Tested 100% Rg Tested TO-252 DPAK D Top View Bottom View D D S G G S Orderable Part Number AOD2544 Package Type TO-252 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.3mH C EAS VDS Spike Power Dissipation B 10µs TC=25°C TC=100°C VSPIKE PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RθJA 15 40 Maximum Junction-to-Case Steady-State RθJC 1.6 G Form Tape & Reel S Minimum Order Quantity 2500 Maximum 150 ±20 23 16 45 6.5 5.0 15 34 180 75 37.5 6.2 4.0 -55 to 175 Units V V A A A mJ V W W °C Max Units 20 °C/W 50 °C/W 2.0 °C/W Rev.1.0: October 2013 .aosmd.
Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 150 IDSS Zero Gate Voltage Drain Current VDS=150V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 1.7 VGS=10V, ID=5A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=2A gFS Forward Transconductance VDS=5V, ID=5A VSD Diode Fo
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