Datasheet Details
| Part number | AOD2N60A |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 523.04 KB |
| Description | 2A N-Channel MOSFET |
| Datasheet | AOD2N60A_AlphaOmegaSemiconductors.pdf |
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Overview: AOD2N60A/AOI2N60A/AOU2N60A 600V,2A N-Channel MOSFET General.
| Part number | AOD2N60A |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 523.04 KB |
| Description | 2A N-Channel MOSFET |
| Datasheet | AOD2N60A_AlphaOmegaSemiconductors.pdf |
|
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• Advanced High Voltage MOSFET technology • Low RDS(ON) • Low Ciss and Crss • High Current Capability • RoHS and Halogen Free pliant Product Summary VDS @ Tj,max ID (at VGS=10V) RDS(ON) (at VGS=10V) 700V 2A < 4.7W Applications • General Lighting for LED and CCFL • AC/DC Power supplies for Industrial, Consumer, and Tele 100% UIS Tested 100% Rg Tested TO252 TO251A TO-251 DPAK IPAK IPAK D Top View Bottom View Top View Bottom View Top View Bottom View D D S G AOD2N60A G S Orderable Part Number AOD2N60A AOI2N60A AOU2N60A S D G AOI2N60A G D S Package Type TO-252 TO-251A TO-251 S D G GG SD S AOU2N60A Form Tape & Reel Tube Tube Minimum Order Quantity 2500 4000 4000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TC=25°C CurrentB TC=100°C Pulsed Drain Current C Avalanche Current C,I Repetitive avalanche energy C,I Single pulsed avalanche energy H Peak diode recovery dv/dt VGS ID IDM IAR EAR EAS dv/dt TC=25°C Power Dissipation B Derate above 25oC PD Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TJ, TSTG TL Maximum 600 ±30 2 1.4 6 4.6 10.6 97 5 57 0.45 -50 to 150 300 Units V V A A mJ mJ V/ns W W/ oC °C °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A,G Maximum Case-to-sink A Maximum Junction-to-CaseD,F Symbol RqJA RqCS RqJC Typical 40 1.8 Maximum 50 0.5 2.2 Units °C/W °C/W °C/W Rev.2.1: August 2023 .aosmd.
Page 1 of 6 AOD2N60A/AOI2N60A/AOU2N60A Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0V, TJ=25°C ID=250μA, VGS=0V, TJ=150°C BVDSS /∆TJ Zero Gate Voltage Drain Current ID=250μA, VGS=0V IDSS Zero Gate Voltage Drain Current
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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AOD2N60A | N-Channel MOSFET | INCHANGE |
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AOD2N60 | N-Channel MOSFET | INCHANGE |
| Part Number | Description |
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