AOD408 Datasheet | Alpha & Omega Semiconductors

Description The AOD408 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AOD408 is Pbfree (meets ROHS & Sony 259 specifications). AOD408L is a Green Product ordering option. AOD408 and AOD408L are electrically identical. Features VDS (V) = 30V ID = 18A (VGS = 10V) RDS(ON) < 18mΩ (VGS = 10V) RDS(ON) < 27mΩ (VGS = 4.5V) TO-252 D-PAK D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Maximum VDS 30 Drain-Source Voltage VGS ±20 Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.1m H TC=25°C Power Dissipation Power Dissipation Units V V A A m J W W °C TC=25°C TC=100°C 18 ID IDM IAR EAR PD PDSM TJ, TSTG 18 40 18 40 60 30 2.5 1.6 -55 to 175 TC=100°C TA=25°C TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient Maximum Junction-to-Case B Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 16.7 40 1.9 Max 25 50 2.5 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) g FS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.5V, ID=10A Forward Transconductance VDS=5V, ID=18A IS=1A,V GS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current Conditions ID=250 µA, VGS=0V VDS=24V, V GS=0V TJ=55°C VDS=0V, VGS= ±20V VDS=VGS ID=250 µA VGS=4.5V, VDS=5V VGS=10V, ID=18A TJ=125°C 1 40 13.6 18 20.6 25 0.75 1 18 1040 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 180 110 0.7 19.8 VGS=10V, V DS=15V, ID=18A 9.8 2.5 3.5 4.5 VGS=10V, V DS=15V, R L=0.82 Ω,...