AOD413Y
AOD413Y is P-Channel MOSFET manufactured by Alpha & Omega Semiconductors.
Description
The AOD413Y uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. Standard product AOD413Y is Pb free, inside and out. It uses Pb-free die attach and plating material(meets ROHS & Sony 259 specifications). AOD413YL is a Green Product ordering option. AOD413Y and AOD413YL are electrically identical.
TO-252 D-PAK
Features
VDS (V) = -40V ID = -12A (VGS = -10V) RDS(ON) < 45mΩ (VGS = -10V) RDS(ON) < 69mΩ (VGS = -4.5V)
Top View Drain Connected to Tab
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.1m H TC=25°C Power Dissipation B Power Dissipation A TC=100°C TA=25°C TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case C
Maximum -40 ±20 -12 -12 -30 -12 30 50 25 2.5 1.6 -55 to 175
Units V V A A m J W W °C
TA=25°C
TA=100°C G
ID IDM IAR EAR PD PDSM TJ, TSTG
Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL
Typ 16.7 40 2.5
Max 25 50 3
Units °C/W °C/W °C/W
Alpha & Omega Semiconductor, Ltd.
Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) g FS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=-4.5V, ID=-8A Forward Transconductance VDS=-5V, ID=-12A IS=-1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current Conditions ID=-10m A, V GS=0V VDS=-32V, VGS=0V TJ=55°C VDS=0V, VGS=±20V VDS=VGS ID=-250 µA VGS=-10V, VDS=-5V VGS=-10V, ID=-12A TJ=125°C -1 -30...
