AOD434 Datasheet | Alpha & Omega Semiconductors

Description The AOD434 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected to a 2KV HBM rating. Standard Product AOD434 is Pbfree (meets ROHS & Sony 259 specifications). AOD434L is a Green Product ordering option. AOD434 and AOD434L are electrically identical. Features VDS (V) = 20V ID = 18A (VGS = 10V) RDS(ON) < 14mΩ (VGS = 10V) RDS(ON) < 16mΩ (VGS = 4.5V) RDS(ON) < 21mΩ (VGS = 2.5V) RDS(ON) < 30mΩ (VGS = 1.8V) ESD Rating: 2KV HBM TO-252 D-PAK Top View Drain Connected to Tab Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.1m H TC=25°C Power Dissipation Power Dissipation Maximum 20 ±12 18 18 30 18 37 60 30 2.5 1.6 -55 to 175 Units V V A A m J W W °C TC=25°C TC=100°C ID IDM IAR EAR PD PDSM TJ, TSTG TC=100°C TA=25°C TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient Maximum Junction-to-Case B Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 16.7 40 1.9 Max 25 50 2.5 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AOD434 Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=16V, VGS=0V TJ=55°C VDS=0V, VGS=±10V VDS=0V, IG=±250u A VDS=VGS ID=250µA VGS=4.5V, VDS=5V VGS=10V, ID=18A TJ=125°C RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=15A VGS=2.5V, ID=10A VGS=1.8V, ID=5A g FS VSD IS Forward Transconductance VDS=5V, ID=18A IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current ±12 0.5 30 10.9 14.3 12.6 16.5 23.2 36 0.73 1 18 1810 VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz 232 200 1.6 40.1 VGS=10V, VDS=10V, ID=18A 8.9 1.7 6.2 4 VGS=10V, VDS=10V,...