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AOD434 Datasheet N-channel MOSFET

Manufacturer: Alpha & Omega Semiconductors

Overview: .. AOD434 N-Channel Enhancement Mode Field Effect Transistor General.

General Description

The AOD434 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating.

It is ESD protected to a 2KV HBM rating.

Standard Product AOD434 is Pbfree (meets ROHS & Sony 259 specifications).

Key Features

  • VDS (V) = 20V ID = 18A (VGS = 10V) RDS(ON) < 14mΩ (VGS = 10V) RDS(ON) < 16mΩ (VGS = 4.5V) RDS(ON) < 21mΩ (VGS = 2.5V) RDS(ON) < 30mΩ (VGS = 1.8V) ESD Rating: 2KV HBM TO-252 D-PAK D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH TC=25°C Power Dissipation Power Dissipation.

More Datasheets from Alpha & Omega Semiconductors

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