Datasheet Details
| Part number | AOD498 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 287.45 KB |
| Description | 100V N-Channel MOSFET |
| Datasheet | AOD498-AlphaOmegaSemiconductors.pdf |
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Overview: AOD498 100V N-Channel MOSFET General.
| Part number | AOD498 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 287.45 KB |
| Description | 100V N-Channel MOSFET |
| Datasheet | AOD498-AlphaOmegaSemiconductors.pdf |
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The AOD498 bines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).
This device is ideal for boost converters and synchronous rectifiers for consumer, tele, industrial power supplies and LED backlighting.
Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 100% UIS Tested 100% Rg Tested 100V 11A < 140mΩ < 152mΩ TO252 DPAK Top View Bottom View D D D S G G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC G S Maximum 100 ±20 11 8 20 2.5 2 8 3 45 23 2.1 1.3 -55 to 175 Typ Max 17 25 50 60 2.7 3.3 Units V V A A A mJ W W °C Units °C/W °C/W °C/W Rev 0: August 2012 .aosmd.
| Brand Logo | Part Number | Description | Manufacturer |
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AOD498 | N-Channel MOSFET | INCHANGE |
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