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AOD496 - N-Channel MOSFET

Datasheet Summary

Features

  • Static drain-source on-resistance: RDS(on)≤9.5mΩ.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet preview – AOD496

Datasheet Details

Part number AOD496
Manufacturer INCHANGE
File Size 312.99 KB
Description N-Channel MOSFET
Datasheet download datasheet AOD496 Datasheet
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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor AOD496 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤9.5mΩ ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Be suitable for use as a high side switch in SMPS and general purpose applications. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous IDM Drain Current-Single Pulsed PD Total Dissipation @TC=25℃ Tj Operating Junction And Storage Temperature Tstg ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance 2 13 VALUE 30 ±20 62 120 62.5 -55~175 UNIT V V A A W ℃ MAX 2.
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