AOD607 Datasheet | Alpha & Omega Semiconductors

Description The AOD607 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The plementary MOSFETs may be used in H-bridge, Inverters and other applications. Standard product AOD607 is Pbfree (meets ROHS & Sony 259 specifications). AOD607L is a Green Product ordering option. AOD607 and AOD607L are electrically identical. TO-252-4L D-PAK D1/D2 Features n-channel p-channel -30V VDS (V) = 30V ID = 12A (V GS=10V) -12A (V GS = -10V) RDS(ON) RDS(ON) < 25 m Ω (VGS=10V) < 37 m Ω (VGS = -10V) < 62 m Ω (VGS = -4.5V) < 34 m Ω (VGS=4.5V) D1/D2 Top View Drain Connected to Tab G1 S1 G2 S2 n-channel S1 G1 S2 G2 p-channel Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 30 V Gate-Source Voltage ±20 GS Continuous Drain Current G Pulsed Drain Current Avalanche Current Max p-channel -30 ±20 -12 -12 -40 -18 40 25 12.5 2.1 1.3 -55 to 175 Typ 19 47 4.5 19 47 4.5 Max 23 60 6 23 60 6 Units V V A A m J W W °C TC=25°C TC=100°C ID IDM IAR EAR PD PDSM TC=25°C 12 12 40 18 40 25 12.5 2.1 1.3 -55 to 175 Symbol RθJA RθJC RθJA RθJC Device n-ch n-ch n-ch p-ch p-ch p-ch Repetitive avalanche energy L=0.1m H Power Dissipation Power Dissipation TC=100°C TA=25°C TA=70°C TJ, TSTG Junction and Storage Temperature Range Thermal Characteristics: n-channel and p-channel Parameter t ≤ 10s Maximum Junction-to-Ambient A A Steady-State Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Case B t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Case B °C/W °C/W °C/W °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. N-Channel Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) g FS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static...