Datasheet Details
| Part number | AOE66410 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 381.41 KB |
| Description | 40V N-Channel AlphaSGT |
| Datasheet | AOE66410-AlphaOmegaSemiconductors.pdf |
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Overview: AOE66410 40V N-Channel AlphaSGT TM General.
| Part number | AOE66410 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 381.41 KB |
| Description | 40V N-Channel AlphaSGT |
| Datasheet | AOE66410-AlphaOmegaSemiconductors.pdf |
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• Thermal enhanced XSFET package • Trench Power AlphaSGTTM technology • Low RDS(ON) • Low Gate Charge • Optimized for mon ground of Sencondary-side Synchrounous Rectifier • RoHS and Halogen-Free pliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 40V 100A < 1mΩ < 1.5mΩ Applications • Synchrounous Rectification in DC/DC and AC/DC Converters • Chargers 100% UIS Tested 100% Rg Tested DFN 5x6 XSFET Top View Bottom View Top View D PIN 1 S D D D G PIN 1 G1 D2 D3 D4 8S 7S 6S 5S G S Orderable Part Number AOE66410 Package Type DFN 5x6 XSFET Form Tape & Reel Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.3mH C EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 40 ±20 100 100 400 54 43 78 913 147 59 5.0 3.2 -55 to 150 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s 20 Maximum Junction-to-Ambient A D Steady-State RqJA 45 Maximum Junction-to-Case Steady-State RqJC 0.7 Max 25 55 0.85 Units V V A A A mJ W W °C Units °C/W °C/W °C/W Rev.1.1: July 2023 .aosmd.
Page 1 of 6 AOE66410 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 40 IDSS Zero Gate Voltage Drain Current VDS=40V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 1.5 VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconduct
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