Datasheet Details
| Part number | AONS62920 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 352.29 KB |
| Description | 100V N-Channel AlphaSGT |
| Datasheet | AONS62920-AlphaOmegaSemiconductors.pdf |
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Overview: AONS62920 100V Channel AlphaSGT TM General.
| Part number | AONS62920 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 352.29 KB |
| Description | 100V N-Channel AlphaSGT |
| Datasheet | AONS62920-AlphaOmegaSemiconductors.pdf |
|
|
|
• Trench Power AlphaSGTTM technology • Low RDS(ON) • Logic Driven • RoHS and Halogen-Free pliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 100V 48A < 6.3mΩ < 7.6mΩ Applications • Synchronous Rectification for Quick Charger 3.0 • Synchronous Rectification for AC/DC adapter and DC/DC brick power 100% UIS Tested 100% Rg Tested Top View DFN5x6 Bottom View PIN1 Orderable Part Number AONS62920 PIN1 Package Type DFN 5x6 Top View S1 S2 S3 G4 8D 7D 6D 5D Form Tape & Reel D G S Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.1mH C VDS Spike I 10μs TC=25°C Power Dissipation B TC=100°C VGS ID IDM IDSM IAS EAS VSPIKE PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 100 ±20 48 48 185 22 17.5 44 97 120 113.5 45.5 6.2 4.0 -55 to 150 Units V V A A A mJ V W W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 15 40 Maximum Junction-to-Case Steady-State RqJC 0.8 Max 20 50 1.1 Units °C/W °C/W °C/W Rev.1.2: January 2024 .aosmd.
Page 1 of 6 AONS62920 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 100 IDSS Zero Gate Voltage Drain Current VDS=100V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 1.3 VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS
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