Datasheet Details
| Part number | AONS62922 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 761.75 KB |
| Description | 120V N-Channel AlphaSGT |
| Datasheet | AONS62922-AlphaOmegaSemiconductors.pdf |
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Overview: AONS62922 120V N-Channel AlphaSGT TM General.
| Part number | AONS62922 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 761.75 KB |
| Description | 120V N-Channel AlphaSGT |
| Datasheet | AONS62922-AlphaOmegaSemiconductors.pdf |
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• Trench Power AlphaSGTTM technology • Low RDS(ON) • Logic level Gate Drive • Optimized for synchronous Rectifier • RoHS and Halogen-Free pliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 120V 85A < 7mΩ < 9mΩ Applications • Synchronous Rectification for Flyback Converters • Charger for Mobile Devices • USB-PD Adaptors 100% UIS Tested 100% Rg Tested Top View DFN5x6 Bottom View PIN1 Orderable Part Number AONS62922 PIN1 Package Type DFN 5x6 Top View 1 8 2 7 3 6 4 5 Form Tape & Reel D G S Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 120 ±20 85 75 250 22 17.5 60 180 215 86 7.3 4.7 -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 14 40 0.43 Max 17 50 0.58 Units °C/W °C/W °C/W Rev.1.0: July 2017 .aosmd.
Page 1 of 6 AONS62922 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 120 IDSS Zero Gate Voltage Drain Current VDS=120V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 1.4 VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A, VGS=0V IS
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