Datasheet Details
| Part number | AONS62530 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 482.82 KB |
| Description | 150V N-Channel MOSFET |
| Datasheet | AONS62530-AlphaOmegaSemiconductors.pdf |
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Overview: AONS62530 150V N-Channel αMOS TM General.
| Part number | AONS62530 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 482.82 KB |
| Description | 150V N-Channel MOSFET |
| Datasheet | AONS62530-AlphaOmegaSemiconductors.pdf |
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• Latest Trench Power αMOS (αMOS MV) technology • Low Gate Charge • Optimized for fast-switching applications • RoHS and Halogen-Free pliant Application • AC-DC and DC-DC Converters Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 100% UIS Tested 100% Rg Tested 150V 19A < 58mΩ < 72mΩ DFN5X6 D Top View Bottom View Top View PIN1 S1 S2 S3 G4 PIN1 8D 7D 6D 5 DG S Orderable Part Number AONS62530 Package Type DFN 5x6 Form Tape & Reel Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.3mH C EAS Power Dissipation B TC=25°C TC=100°C PD Power Dissipation A TA=25°C TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 150 ±20 19 12 43 6.2 4.9 15 34 48 19.2 5 3.2 -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 20 45 Maximum Junction-to-Case Steady-State RqJC 2.1 Max 25 55 2.6 Units °C/W °C/W °C/W Rev.1.0: November 2019 .aosmd.
Page 1 of 6 AONS62530 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 150 IDSS Zero Gate Voltage Drain Current VDS=150V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 1.7 VGS=10V, ID=5A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=2A gFS Forward Transconductance VDS=5V, ID=5A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input
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