Download AOH3110 Datasheet PDF
Alpha & Omega Semiconductors
AOH3110
AOH3110 is 100V N-Channel MOSFET manufactured by Alpha & Omega Semiconductors.
Description Product Summary The AOH3110 bines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for boost converters and synchronous rectifiers for consumer, tele, industrial power supplies and LED backlighting. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 100V 1.0A < 700mΩ < 820mΩ SOT223 Top View Bottom View Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current G TA=25°C TA=70°C Pulsed Drain Current C Avalanche Current C Avalanche energy L=50u H C TA=25°C Power Dissipation B TA=70°C Junction and Storage Temperature Range TJ, TSTG Maximum 100 ±20 1 0.8 4 3.5 0.3 3.1 2 -55 to 150 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RθJA...