Datasheet Details
| Part number | AOI4184 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 400.38 KB |
| Description | 40V N-Channel MOSFET |
| Datasheet | AOI4184_AlphaOmegaSemiconductors.pdf |
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Overview: AOD4184/AOI4184 40V N-Channel MOSFET General.
| Part number | AOI4184 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 400.38 KB |
| Description | 40V N-Channel MOSFET |
| Datasheet | AOI4184_AlphaOmegaSemiconductors.pdf |
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Product Summary The AOD4184/AOI4184 used advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
With the excellent thermal resistance of the DPAK package, those devices are well suited for high current load applications.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 100% UIS Tested 100% Rg Tested 40V 50A < 8mW < 11mW TopView TO252 DPAK Bottom View Top View TO-251A IPAK Bottom View D D DS G DG S S D G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C Continuous Drain Current Avalanche Current C TA=25°C TA=70°C Avalanche energy L=0.1mH C VGS ID IDM IDSM IAS, IAR EAS, EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG G D S Maximum 40 ±20 50 40 120 12 9.5 35 61 50 25 2.3 1.5 -55 to 175 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 18 44 Maximum Junction-to-Case Steady-State RqJC 2.4 Max 22 55 3 D G S Units V V A A A mJ W W °C Units °C/W °C/W °C/W Rev.2.1: August 2023 .aosmd.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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AOI4184 | N-Channel MOSFET | INCHANGE |
| Part Number | Description |
|---|---|
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| AOI4146 | 30V N-Channel MOSFET |
| AOI403 | 30V P-Channel MOSFET |
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