AOI4184 Overview
Key Specifications
Package: TO-251-3
Mount Type: Through Hole
Pins: 3
Max Operating Temp: 175 °C
Description
Product Summary The AOD4184/AOI4184 used advanced trench technology and design to provide excellent RDS(ON) with low gate charge. With the excellent VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 100% UIS Tested 100% Rg Tested 40V 50A < 8mW < 11mW TopView TO252 DPAK Bottom View Top View TO-251A IPAK Bottom View D D DS G DG S S D G Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C Continuous Drain Current Avalanche Current C TA=25°C TA=70°C Avalanche energy L=0.1mH C VGS ID IDM IDSM IAS, IAR EAS, EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG G D S Maximum 40 ±20 50 40 120 12 9.5 35 61 50 25 2.3 1.5 -55 to 175 Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 18 44 Maximum Junction-to-Case Steady-State RqJC 2.4 Max 22 55 3 D G S Units V V A A A mJ W W °C Units °C/W °C/W °C/W Rev.2.1: August 2023 Page 1 of 6 AOD4184/AOI4184 Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 40 V IDSS Zero Gate Voltage Drain Current VDS=40V, VGS=0V TJ=55°C 1 5 mA IGSS Gate-Body leakage current VDS=0V, VGS=±20V ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS ID=250mA 1.7 2.2 2.6 V ID(ON) On state drain current VGS=10V, VDS=5V 120 A RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A TJ=125°C 6.7 8 11 13 mW VGS=4.5V, ID=15A 8.5 11 mW gFS Forward Transcondu.
