Datasheet4U Logo Datasheet4U.com

AOI444 Datasheet 60v N-channel MOSFET

Manufacturer: Alpha & Omega Semiconductors

Overview: AOD444/AOI444 60V N-Channel MOSFET General.

General Description

The AOD444/AOI444 bine advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).

Those devices are suitable for use in PWM, load switching and general purpose applications.

Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 100% UIS Tested 100% Rg Tested 60V 12A < 60mW < 85mW TopView D TO252 DPAK Bottom View D TopView TO-251A IPAK Bottom View D S G G S S D G G G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.1mH C IDSM IAS, IAR EAS, EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 60 ±20 12 9 30 4 3 19 18 20 10 2.1 1.3 -55 to 175 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC Typ 17.4 50 4 Max 30 60 7.5 D S Units V V A A A mJ W W °C Units °C/W °C/W °C/W Rev 2.1: August 2023 .aosmd.

AOI444 Distributor