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AOI444 Datasheet N-channel MOSFET

Manufacturer: Kexin Semiconductor

Overview: DIP Type N-Channel MOSFET AOI444 (KOI444) TO-251 MOSFET Unit:mm.

Key Features

  • s.
  • VDS (V) = 60V.
  • ID = 12 A (VGS = 10V).
  • RDS(ON) ＜ 60mΩ (VGS = 10V).
  • RDS(ON) ＜ 85mΩ (VGS = 4.5V) D 1 23 123 G S.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Tc=25℃ Continuous Drain Current Tc=100℃ Ta=25℃ Pulsed Drain Current Avalanche Current Avalanche energy L=0.1mH Ta=70℃ Power Dissipation Thermal Resistance. Junction- to-Ambient Thermal Resistance. Junction- to-Case Junction Temperature Storage Temperature Range.

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